Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
STDRIVEG600
High voltage half-bridge gate driver for GaN transistors Features • dV/dt immunity ±200 V/ns • Driver current capability: – 1.3/2.4 A source/sink typ @ 25 °C, 6 V – 5.5/6 A source/sink typ @ 25 °C, 15 V • Separated turn on and turn off gate driver pins • 45 ns propagation delay with tight matching • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Interlocking function • UVLO on low-side and high-side sections • Dedicated pin for shut down functionality • Over temperature protection Applications • High-voltage PFC, DC-DC and DC-AC converters • Switch-mode power supplies • UPS systems • Solar power • Motor driver for home appliances, factory automation and industrial drives. #CommonPartsLibrary #IntegratedCircuit #powermanagement
25 Uses0 StarsLGS5145
Buck Switching Regulator IC Adjustable 1 Output 1000mA SOT-23-6 The LGS5145 is a step-down DC/DC regulator with internal switching, featuring SKIP control mode, which combines low quiescent current with high switching frequency to achieve high efficiency over a wide range of load currents. The SKIP mode uses a short “burst” cycle to switch the inductor current through the internal power MOSFETs, followed by a sleep cycle in which the power switch is turned off and the load current is supplied by the output capacitor. At light loads, the burst cycle is a fraction of the total cycle time, minimizing the average supply current and greatly improving efficiency at light loads. The LGS5145 has a wide input voltage range of 4.5V55V, minimizing the need for external surge suppression components.The LGS5145 features an integrated low resistance 0.6Ω high-side power MOSFET that provides at least 1A of output current capability with excellent load and line transient response. Junction temperature range from -40°C to +125°C ■ All ports are ESD protected to 3000V (HBM). ■ Wide input voltage range: 4.5V-55V ■ 600mΩ High Side Metal Oxide Semiconductor Field Effect Transistors ■ At least 1000mA continuous current output capability ■ Up to 90% efficiency ■ SKIP mode provides very high light load efficiency ■ 1.2MHz fixed operating frequency ■ Internal compensation helps reduce solution size, cost and design complexity ■ Supports capacitive start for large loads ■ Cycle-by-cycle overcurrent protection ■ Output short circuit protection ■ thermal shutdown protection ■ Available in ultra-small package SOT23-6 package #CommonPartsLibrary #IntegratedCircuit #PowerManagement #Voltage-regulator #Switching-regulator
12 Uses0 StarsLM393N
Comparator Standard (General Purpose) Open-Collector, Rail-to-Rail 8-PDIP The LM393N is a dual independent voltage comparator designed for operation from a single power supply over a wide range of voltages. It can also operate from split power supplies, allowing flexible integration into analog and mixed-signal systems. Each comparator features high gain and low input offset voltage, enabling precise comparison between two input signals. The device is optimized for low power consumption and supports open-collector outputs, making it suitable for interfacing with a variety of logic families and external circuits. Its robust design allows reliable performance across a broad temperature range, making it appropriate for industrial, automotive, and consumer applications. Functional Overview The device contains two separate comparators sharing a common power supply. Each comparator compares the voltage at its inverting and non-inverting inputs and drives the output transistor accordingly. The open-collector output stage allows wired-OR configurations and easy level shifting using an external pull-up resistor. When the non-inverting input voltage exceeds the inverting input voltage, the output transistor turns off, allowing the output to be pulled high externally. When the inverting input is higher, the transistor conducts and pulls the output low. Electrical Characteristics The LM393N operates over a wide supply voltage range and exhibits low input bias current and low input offset voltage, contributing to stable and accurate performance. The input common-mode voltage range includes ground, enabling ground-referenced sensing. The output stage is capable of sinking current sufficient to drive loads such as LEDs, relays (with appropriate buffering), or logic inputs. The device is designed for low supply current, supporting energy-efficient designs. Input and Output Behavior Inputs are high impedance and suitable for direct connection to sensors, reference voltages, or signal conditioning networks. The output requires an external pull-up resistor to define the high logic level. This configuration allows flexibility in selecting output voltage levels independent of the supply voltage, within device limits. The open-collector structure also supports multiple outputs connected together for logical operations. Thermal and Environmental Conditions The device is specified for operation across a wide temperature range, ensuring stable functionality under varying environmental conditions. Proper thermal management and adherence to recommended operating conditions ensure long-term reliability. Packaging and Pin Configuration The LM393N is typically provided in a dual in-line package suitable for through-hole mounting. The pin configuration supports two independent comparator channels, each with inverting input, non-inverting input, and output, along with shared power supply and ground connections. Applications The LM393N is suitable for voltage level detection, threshold sensing, zero-crossing detection, oscillator circuits, pulse generation, and analog-to-digital interfacing. It is commonly used in power management systems, battery monitoring, signal conditioning, and embedded control systems. Design Considerations External components such as pull-up resistors, input filtering networks, and hysteresis feedback may be required depending on the application. Careful layout and noise considerations improve performance in high-sensitivity circuits. The open-collector output requires proper configuration to ensure correct logic levels and switching behavior. #commonpartslibrary #integratedcircuit #comparator
29 Uses0 StarsMMBT2222ALT3G
Bipolar (BJT) Transistor NPN 40V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT2222ALT3G is a NPN general-purpose bipolar junction transistor (BJT) manufactured by onsemi, designed in a SOT-23 surface-mount package. It is the SMD version of the well-known 2N2222A transistor family, used for switching and signal amplification in compact electronic circuits. It is widely used in industrial, automotive (AEC-Q101 qualified variants), and general embedded systems due to its reliability, small size, and good electrical performance. Key Features NPN General-Purpose Transistor Suitable for switching and low-power amplification Collector-Emitter Voltage (Vceo) Up to 40 V Collector Current Up to 600 mA Power Dissipation Around 225–300 mW (depending on package conditions) High Frequency Performance Transition frequency up to ~300 MHz DC Current Gain (hFE) Typically ~100 at moderate currents Low Saturation Voltage Efficient switching performance for digital circuits SOT-23 Surface-Mount Package Compact footprint for modern PCB designs Wide Temperature Range Typically -55°C to +150°C RoHS / Lead-Free Compliant Environmentally compliant manufacturing Typical Applications LED switching circuits Relay driver stages MCU signal interfacing (Arduino, ESP32, etc.) Small motor drivers General signal amplification Automotive and industrial control circuits Important Note MMBT2222ALT3G = SMD version (SOT-23) Equivalent to 2N2222A (TO-92 through-hole version) in function, but not in physical package. 2N2222A SOT-23 #commonpartslibrary #transistor #bjt
684 Uses0 StarsBCM856DS,115
Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important. Key Features Dual PNP transistor configuration in a single package Matched transistor pair for improved circuit stability Low collector-emitter saturation voltage High current gain consistency between channels Compact SOT-363 (SC-88) package for space-constrained designs Suitable for low-power and signal-level applications Electrical Characteristics (typical values unless otherwise noted) Collector-Emitter Voltage (VCEO): -45 V Collector-Base Voltage (VCBO): -50 V Emitter-Base Voltage (VEBO): -5 V Continuous Collector Current (IC): -100 mA per transistor Power Dissipation (Ptot): ~250 mW total DC Current Gain (hFE): 100 to 300 Transition Frequency (fT): ~100 MHz Package Information Package Type: SOT-363 (SC-88) Mounting: Surface Mount Pin Count: 6 Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout) Applications Differential amplifier input stages Current mirror circuits Signal amplification Analog front-end designs Matched pair transistor applications Additional Notes The two transistors are thermally coupled within the same package, improving matching over temperature variations Ideal for precision analog circuits requiring closely matched transistor characteristics Commonly used in compact and high-density PCB layouts #commonpartslibrary #transistor #bjt #pnp
10 Uses0 StarsCA3046
RF Transistor 5 NPN 15V 50mA 550MHz 300mW Through Hole 14-PDIP The CA3046 contains five matched NPN bipolar junction transistors (BJTs) integrated on a single silicon chip. These transistors share a common substrate but are electrically isolated from each other, allowing flexible circuit configurations. It is commonly used in analog circuits where closely matched transistor characteristics are required, such as differential amplifiers and current mirrors. Key Features Type: NPN transistor array IC Number of Transistors: 5 matched transistors Integrated Structure: Monolithic silicon chip Isolation: Each transistor is individually accessible Matching: Good thermal and electrical matching between transistors Package: Typically 14-pin DIP or SOIC (varies by manufacturer) Electrical Characteristics (typical) Collector-emitter voltage (Vce): up to ~15 V (varies by variant) Collector current: a few milliamps per transistor (low-power signal applications) Frequency response: suitable for low to medium-frequency analog circuits Operating temperature: industrial range (depends on manufacturer spec) Typical Applications Differential amplifiers Current mirrors Temperature sensing circuits Signal processing circuits Oscillators and timing circuits General-purpose analog transistor building blocks #CommonPartsLibrary #Transistor # BJT #RF-transistor #Bipolar
2 Uses0 Stars2SC5171
Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications. Key Features High collector-emitter voltage capability Fast switching performance High current handling capability Low saturation voltage Suitable for high-frequency operation Absolute Maximum Ratings Collector-Emitter Voltage (V<sub>CEO</sub>): 1500 V Collector-Base Voltage (V<sub>CBO</sub>): 1500 V Emitter-Base Voltage (V<sub>EBO</sub>): 9 V Collector Current (I<sub>C</sub>): 3 A Collector Power Dissipation (P<sub>C</sub>): 50 W Junction Temperature (T<sub>J</sub>): 150°C Electrical Characteristics (at T<sub>A</sub> = 25°C unless otherwise specified) DC Current Gain (h<sub>FE</sub>): 8 – 40 Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>): 3 V (max) Base-Emitter Voltage (V<sub>BE</sub>): ~1.5 V (typ) Collector Cutoff Current (I<sub>CBO</sub>): 1 mA (max) Transition Frequency (f<sub>T</sub>): 4 MHz (typ) Package Information Package Type: TO-220 Mounting Type: Through-hole Pin Configuration: Pin 1: Base Pin 2: Collector Pin 3: Emitter Applications Switching power supplies High-voltage switching circuits CRT display circuits Motor control circuits General-purpose high-voltage amplification #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN
1 Uses0 Stars
