Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
IRLR7843TRPBF
N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor
3 Uses0 StarsIXFH120N15P
N-Channel 200 V 120A (Tc) 714W (Tc) Through Hole TO-247AD (IXFH) # IXFH120N15P ## General Description The IXFH120N15P is a high-current N-channel power MOSFET manufactured by Littelfuse IXYS. It is designed for demanding power switching and power conversion applications requiring low conduction losses, fast switching performance, and high current-handling capability. Built using advanced power MOSFET technology, the device provides excellent efficiency, ruggedness, and thermal performance for industrial power systems, motor drives, battery management equipment, welding systems, uninterruptible power supplies, renewable energy systems, and high-power DC switching applications. Its robust construction and low on-state resistance make it particularly suitable for designs requiring high efficiency and reliable operation under heavy load conditions. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced power semiconductor technology * Low conduction losses * High-current switching capability * Optimized efficiency for power conversion applications * Fast switching performance ### Electrical Characteristics * Low on-state resistance * High-current carrying capability * Low gate drive power requirements * Excellent switching efficiency * Stable electrical performance under demanding operating conditions * Suitable for high-power applications ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation capability * Efficient power control functionality ### Thermal Characteristics * High power dissipation capability * Excellent thermal conductivity * Efficient heat transfer performance * Suitable for heatsink mounting * Reliable operation under continuous load conditions ### Protection and Reliability * Avalanche ruggedness * Robust semiconductor structure * Enhanced reliability under transient conditions * Long operational service life * Industrial-grade durability ### Package Characteristics * Through-hole power package * Electrically isolated mounting configuration * Suitable for high-power assemblies * Automated and manual assembly compatibility * Industrial-grade mechanical construction ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Rugged power device architecture ### Environmental Characteristics * Suitable for industrial operating environments * High mechanical durability * Stable operation across extended temperature ranges * Reliable continuous-duty performance ### Application Areas * Motor Drive Systems * Industrial Power Supplies * Battery Management Systems * Renewable Energy Equipment * Solar Power Converters * DC-DC Converters * High-Power Switching Circuits * Welding Equipment * Uninterruptible Power Supplies * Electric Vehicle Support Systems * Energy Storage Systems * Industrial Automation Equipment ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer Littelfuse IXYS ## Product Family PolarP N-Channel Power MOSFET Series #IXFH120N15P #IXYS #Littelfuse #PowerMOSFET #NChannelMOSFET #PowerElectronics #MotorDrive #DCDCConverter #PowerSupplyDesign #IndustrialElectronics #EnergyStorage #RenewableEnergy #BatteryManagement #ElectronicsEngineering #PowerSemiconductor #Commonpartslibrary #Transistor #MOSFET #FET #tht
0 Uses0 StarsIRLML6244TRPBF
MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents
287 Uses0 StarsIRLML2502
MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign
413 Uses0 StarsXL1509-5.0
Step-down type Fixed 5V 2A 4.5V~40V DC-DC Converters XL1509-5.0 SOIC-8_L4.9-W3.9-P1.27-LS6.0-TR LCSC Part Number: C2902368 JLCPCB Part Class: Extended Part Manufactured by UMW(广东友台半导体) XL1509 step-down DC/DC buck converter, 4.5V to 40V input voltage range, 2A constant output current capability, fixed 150kHz switching frequency, available in 3.3V, 5V, 12V and adjustable output versions, adjustable output from 1.23V to 37V, 100% max duty cycle, 1.5V minimum dropout, internal power transistor, ON/OFF control with hysteresis, thermal shutdown and current limit protection, SOIC-8 package. Search Keywords: XL1509, XL1509 buck converter, XL1509 step down converter, XL1509 DC DC converter, XL1509 SOIC-8, XL1509 2A, XL1509 150kHz, XL1509 adjustable regulator, XL1509 5V, XL1509 3.3V, XL1509 12V, XL1509 replacement, XL1509 datasheet Hashtags: #XL1509 #XL1509BuckConverter #XL1509DCDC #BuckConverter #StepDownConverter #DCDCConverter #SwitchingRegulator #PWMRegulator #2ABuckConverter #150kHzRegulator #AdjustableRegulator #SOIC8
58 Uses0 StarsFS8205A
The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics
308 Uses0 StarsIRLZ44ZPBF
N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier
69 Uses0 Stars
