Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
IGB070S10S1XTMA1
N-Channel 100 V 13A (Ta), 38A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PG-TSON-4-2 GaN transistor is a 100 V e-mode power transistor designed for high-speed switching applications, with a 38 A drain current rating and 5.0 mΩ typical drain-source on-resistance. It features 6.1 nC gate charge, zero reverse-recovery charge, and is housed in a PG-TSON-4 industrial-grade 3 × 3 mm package. #GaN #Transistor #GaNHEMT #PowerTransistor #100V #38A #PGTSON4 #Infineon
49 Uses0 StarsA000005
8-Channel High-Side Source Driver Array – High-voltage, high-current source driver IC designed for LED and lamp driving, relay control, solenoid driving, industrial automation, printers, automotive electronics, PLCs, and embedded control systems. The Allegro UDN2981A integrates eight non-inverting high-side Darlington transistor outputs, allowing direct interfacing between TTL/CMOS logic and higher-voltage loads. Each output can source up to 500 mA, with an output voltage capability of up to 50 V, making it ideal for driving inductive and resistive loads. Features integrated input resistors, output clamp diodes for inductive load protection, and TTL/5 V CMOS-compatible inputs, simplifying circuit design and reducing external component count. Operates from a 4.75 V to 15 V logic supply, over a −20°C to +85°C temperature range, and is housed in an 18-pin DIP (through-hole) package for easy PCB integration. #Allegro #UDN2981A #HighSideDriver #SourceDriver #DarlingtonArray #RelayDriver #SolenoidDriver #LEDDriver #IndustrialAutomation #EmbeddedSystems #PowerDriver #TTLCompatible
3 Uses0 StarsIKW40N120H3FKSA1
IGBT Trench Field Stop 1200 V 80 A 483 W Through Hole PG-TO247-3-1 Insulated Gate Bipolar Transistor (IGBT) for high-speed hard-switching power conversion, integrating a soft, fast-recovery anti-parallel diode. It features a 1200 V collector-emitter voltage, 40 A continuous collector current, supports 20–100 kHz switching frequency, operates at junction temperatures up to 175°C, and is housed in a PG-TO247-3 package using TRENCHSTOP™ trench and field-stop technology. #Infineon #IGBT #TRENCHSTOP #HighSpeedSwitching #1200V #40A #TO247 #PowerSemiconductor #HardSwitching #FreewheelingDiode
0 Uses0 StarsDXT5551P5-13
NPN Bipolar Junction Transistor (BJT) – High-voltage NPN transistor for general-purpose switching and amplification, featuring a 160 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 2.25 W power dissipation. Provides a 130 MHz transition frequency, minimum DC current gain (hFE) of 80 at 10 mA, and 200 mV maximum collector-emitter saturation voltage at 50 mA collector current. Specified for operation over a −55°C to +150°C junction temperature range and housed in a PowerDI™ 5 surface-mount package. #DiodesIncorporated #DXT5551P513 #NPNTransistor #BJT #HighVoltageTransistor #SwitchingTransistor #AmplifierTransistor #160V #600mA #PowerDI5 #DiscreteSemiconductor #EmbeddedSystems
1 Uses0 StarsWMS08N06TS
Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 N-Channel MOSFET for power switching applications, featuring a 60V drain-source voltage (VDS), 80A continuous drain current (ID), and low RDS(on) for efficient conduction. It is housed in a PDFN 5×6 package and supports logic-level gate drive with a ±20 V gate-source voltage (VGS) rating. #NChannelMOSFET #PowerMOSFET #60V #80A #PDFN5x6 #LogicLevel #PowerSwitching
9 Uses0 Stars2N4416
N-Channel Junction Field-Effect Transistor (JFET) – N-channel JFET optimized for high-frequency amplifiers, RF mixers, oscillators, analog switches, and low-noise signal amplification. Features a 30 V gate-to-source breakdown voltage (V(BR)GSS), 5 mA minimum drain current (IDSS) at VDS = 15 V, 3 V maximum gate-source cutoff voltage (VGS(off)), and 4 pF maximum input capacitance (Ciss) at VDS = 15 V for excellent high-frequency performance. Rated for 300 mW power dissipation, offers low noise and low distortion, and is specified for operation over a −50°C to +150°C junction temperature range. Housed in a 4-lead TO-206AF (TO-72 metal can) through-hole package. This part is obsolete and no longer manufactured. #Vishay #Siliconix #2N4416 #JFET #NChannelJFET #RFAmplifier #LowNoiseAmplifier #AnalogSwitch #Oscillator #Mixer #ThroughHole #TO72 #EmbeddedSystems
0 Uses0 Stars
