Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
IRLML2502
MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign
380 Uses0 StarsAO3401
MOSFET P-CH 30V 4.1A SOT-23 The AO3401 is a 30 V P-Channel Enhancement Mode MOSFET designed for high-efficiency power switching applications. It uses advanced trench MOSFET technology to achieve low on-resistance (RDS(on)), low gate charge, and fast switching performance. Packaged in a compact SOT-23 package, it is widely used in load switching, battery-powered devices, reverse-polarity protection circuits, and power management applications. Key Features P-Channel MOSFET Drain-Source Voltage (VDS): −30 V Continuous Drain Current (ID): up to −4 A (25°C) Low RDS(on): 50 mΩ max @ VGS = −10 V 60 mΩ max @ VGS = −4.5 V 85 mΩ max @ VGS = −2.5 V Low Gate Charge: 7 nC typical @ 4.5 V Gate-Source Voltage Rating: ±12 V Low Threshold Voltage: −0.5 V to −1.3 V Fast Switching Characteristics Compact SOT-23 Surface-Mount Package Operating Junction Temperature: up to 150°C Suitable for Low-Voltage Logic-Level Drive Applications Typical Applications Load switches Battery protection circuits Reverse-polarity protection Power-path management DC-DC converters Portable and battery-powered electronics PWM switching applications #CommonPartsLibrary #Transistor #FET #Mosfet
27 Uses0 Stars6N137-560E
The Broadcom® 6N137, HCPL-26xx/06xx/4661, HCNW137/26x1 are optically coupled gates that combine a GaAsP light emitting diode and an integrated high gain photo detector. An enable input allows the detector to be strobed. The output of the detector IC is an open collector Schottky-clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification up to 15,000 V/µs at Vcm = 1000V. This unique design provides maximum AC and DC circuit isolation while achieving TTL compatibility. The optocoupler AC and DC operational parameters are guaranteed from – 40°C to +85°C allowing trouble-free system performance. 15 kV/µs minimum Common Mode Rejection (CMR) at VCM= 1 kV for HCNW2611, HCPL-2611, HCPL-4661, HCPL-0611, HCPL-0661 High speed: 10 MBd typical LSTTL/TTL compatible Low input current capability: 5 mA Guaranteed AC and DC performance over temperature: –40°C to +85°C Available in 8-Pin DIP, SOIC-8, widebody packages Strobable output (single channel products only) Safety approval – UL recognized – 3750 Vrms for 1 minute and 5000 Vrms for 1 minute per UL1577 CSA approved (5000 Vrms/1 Minute rating is for HCNW137/26X1 and Option 020 [6N137, HCPL-2601/11/30/31, HCPL-4661] products only) – IEC/EN/DIN EN 60747-5-5 approved with: VIORM = 567 Vpeak for 06xx Option 060 VIORM = 630 Vpeak for 6N137/26xx Option 060 VIORM =1414 Vpeak for HCNW137/26x1 MIL-PRF-38534 hermetic version available (HCPL56xx/66xx) #CommonPartsLibrary #Isolator #Optocoupler
77 Uses0 StarsSI2300
The SI2300 is a N-channel enhancement-mode MOSFET designed for efficient switching and power management applications. Fabricated using advanced trench MOS technology, it delivers low on-state resistance, fast switching performance, and high current handling capability within a compact surface-mount package. The device is widely used in load switching, battery-powered equipment, DC-DC converters, motor control circuits, power distribution systems, and general-purpose switching applications where efficiency and space optimization are critical. Features N-channel enhancement-mode MOSFET Low on-state resistance for reduced conduction losses Fast switching characteristics Low gate charge for efficient drive operation Compact surface-mount package High current carrying capability Low power dissipation design Optimized for battery-operated systems Suitable for high-speed switching applications RoHS-compliant and lead-free construction Applications Power management circuits Load switching systems Battery protection modules Portable electronic devices DC-DC converter circuits Motor drive applications Power distribution networks Embedded control systems Consumer electronics Industrial automation equipment Electrical Characteristics Low drain-to-source on-resistance High drain current capability Low gate threshold voltage Fast turn-on and turn-off response Low gate capacitance High switching efficiency Low leakage current characteristics Enhanced thermal performance Stable operation across specified temperature ranges Reliable avalanche and transient performance Mechanical Characteristics Surface-mount package construction Compact footprint for high-density PCB layouts Suitable for automated assembly processes Compatible with standard reflow soldering methods Tape-and-reel packaging availability Robust package integrity for production environments Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant package design Suitable for operation in demanding electronic environments Compliant with RoHS and environmental regulations Long operational lifetime under recommended operating conditions #commonpartslibrary #mosfet #nchannelmosfet #powermanagement #powerswitching #semiconductor #transistor #loadswitch #dcdcconverter #batteryprotection #embeddedsystems #industrialelectronics #consumerelectronics #smtcomponent #electronicsdesign
339 Uses0 StarsBSS138-G
MOSFET 50V 0.22A SOT-23-3 These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V ♦ RDS(on) = 3.5 @ VGS = 10 V ♦ RDS(on) = 6.0 @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halogen Free #CommonPartsLibrary #Transistor
156 Uses0 StarsXL1509-5.0
Step-down type Fixed 5V 2A 4.5V~40V DC-DC Converters XL1509-5.0 SOIC-8_L4.9-W3.9-P1.27-LS6.0-TR LCSC Part Number: C2902368 JLCPCB Part Class: Extended Part Manufactured by UMW(广东友台半导体) XL1509 step-down DC/DC buck converter, 4.5V to 40V input voltage range, 2A constant output current capability, fixed 150kHz switching frequency, available in 3.3V, 5V, 12V and adjustable output versions, adjustable output from 1.23V to 37V, 100% max duty cycle, 1.5V minimum dropout, internal power transistor, ON/OFF control with hysteresis, thermal shutdown and current limit protection, SOIC-8 package. Search Keywords: XL1509, XL1509 buck converter, XL1509 step down converter, XL1509 DC DC converter, XL1509 SOIC-8, XL1509 2A, XL1509 150kHz, XL1509 adjustable regulator, XL1509 5V, XL1509 3.3V, XL1509 12V, XL1509 replacement, XL1509 datasheet Hashtags: #XL1509 #XL1509BuckConverter #XL1509DCDC #BuckConverter #StepDownConverter #DCDCConverter #SwitchingRegulator #PWMRegulator #2ABuckConverter #150kHzRegulator #AdjustableRegulator #SOIC8
56 Uses0 StarsFS8205A
The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics
232 Uses0 StarsIRLZ44ZPBF
N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier
68 Uses0 Stars
