Switches
A switch is a device that allows electricity to flow through a circuit by completing or interrupting the connection. It is a common component in electrical and electronic systems and is used in a variety of applications, such as controlling the flow of electricity in a circuit, turning devices on and off, and routing electrical signals. One of the primary use cases for switches is to control the flow of electricity in a circuit. This can be done by manually flipping the switch or by using a control mechanism, such as a timer or a sensor. Another common use for switches is to turn devices on and off. This can be done using a switch that is built into the device or by using a separate switch that is connected to the device. In addition to these basic use cases, switches can also be used to route electrical signals. For example, a switch can be used to route a signal from one device to another or to direct a signal to a specific circuit or component. If you're looking for a wide variety of switches for your projects, flux.ai has the world's largest community-driven public library of them. The library includes footprints, symbols, datasheets, and simulation models for a wide range of switches, making it easy to find the right switch for your needs.
SS56
SS56 — 60V 5A SMA Schottky Barrier Rectifier Surface-mount Schottky barrier rectifier diode for low-loss rectification, freewheeling/flyback paths, reverse-polarity protection, and switching power supplies. Key specifications from datasheet: - Series/type: SS52–SS5200 Schottky barrier rectifier; part marking: MDD SS56 - Package: SMA / DO-214AC molded plastic body - Polarity: cathode indicated by color band - Maximum repetitive peak reverse voltage (VRRM): 60 V - Maximum DC blocking voltage (VDC): 60 V - Maximum RMS voltage (VRMS): 42 V - Average forward rectified current (IAV): 5.0 A - Peak forward surge current (IFSM): 120 A, 8.3 ms single half-sine, JEDEC method - Maximum instantaneous forward voltage (VF): 0.70 V at 5.0 A - Maximum reverse current (IR): 1.0 mA at 25°C; 50 mA at 100°C, rated DC blocking voltage - Typical junction capacitance (CJ): 300 pF at 1 MHz, VR = 4 VDC - Typical thermal resistance (RθJA): 60 °C/W with 2.0 in × 2.0 in copper pad area - Operating junction temperature range (TJ): -55°C to +125°C - Storage temperature range (TSTG): -55°C to +150°C - High-temperature soldering: 250°C for 10 s at terminals - Suggested pad layout dimensions: A 1.68 mm, B 1.52 mm, C 3.93 mm, D 2.41 mm, E 5.45 mm - Packaging: 2,000 pcs/reel on 7 in reel; 5,000 pcs/reel on 11 in reel; 7,500 pcs/reel on 13 in reel - Compliance/features: UL 94V-0 plastic package, RoHS, majority-carrier metal-silicon junction, low power loss, high efficiency, high surge current capability
1.2k Uses0 StarsIRFB4110PBF
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Power MOSFET, N-channel enhancement-mode transistor designed for high-current switching applications. Features a 100 V drain-source voltage rating, 180 A continuous drain current, 3.7 mΩ maximum drain-source on-resistance, and TO-220AB package. #PowerMOSFET #NMOSFET #Infineon #IRFB4110PBF #TO220AB #commonpartslibrary #transistor #tht
247 Uses0 Stars
TPS2113APWR
TPS2113APWR is a TI autoswitching power multiplexer that selects between two 2.8V–5.5V input supplies and provides one output, with low 84mΩ typical on-resistance, adjustable current limit, reverse/cross-conduction blocking, inrush control, and thermal shutdown. It is suited for seamless switchover between sources such as USB/wall adapter and battery power.
56 Uses0 StarsBS250P
P-Channel 45V 230mA (Ta) 700mW (Ta) Through Hole TO-92 P-channel enhancement-mode MOSFET transistor used for low-side or high-side load switching and signal control applications, providing voltage-controlled conduction between drain and source. Key specifications (per datasheet): Drain-source voltage (VDS): −45 V Continuous drain current (ID): −0.18 A Gate-source voltage (VGS): ±20 V Package: SOT-23 surface-mount package MOSFET type: P-channel enhancement mode #PChannelMOSFET #EnhancementMode #SOT23 #45V #LowPowerSwitch #DiscreteSemiconductor #CommonPartsLibrary #Transistor #FET #Mosfet #BS250
0 Uses0 StarsTPS552892RYQR
Buck-Boost Switching Regulator IC Positive Programmable 0.8V 1 Output 8A 21-PowerVFQFN Synchronous buck-boost DC-DC converter IC that regulates output voltage from a wide input supply range for power management applications. The TPS552892RYQR integrates a four-switch synchronous buck-boost power stage and operates with a 2.7 V to 36 V input voltage range, providing a regulated output voltage across a wide conversion range. It supports programmable output voltage settings and adjustable switching frequency operation, enabling flexible power design optimization. The device includes I²C interface control for configuration and telemetry monitoring. It is designed for high-efficiency step-up and step-down conversion in compact power systems. Key specifications (per datasheet): Input voltage range: 2.7 V to 36 V Topology: Synchronous 4-switch buck-boost converter Control/interface: I²C configurable operation Adjustable switching frequency (as specified in datasheet) #DC-DCConverter #BuckBoost #PowerManagement #TexasInstruments #SynchronousConverter #IC
56 Uses0 StarsSH-6X6X5H-TP
SWITCH TACTILE SPST SMD The SH-6X6X5H-TP is a compact surface-mount tactile push-button switch manufactured by Kinghelm. It is a 6 mm × 6 mm momentary SPST (Single Pole Single Throw) switch designed for user-input functions in consumer electronics, industrial controls, embedded systems, IoT devices, and portable equipment. The switch provides tactile feedback when pressed and automatically returns to its normal state when released.
94 Uses0 StarsC3M0060065D
Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed
42 Uses0 Stars
