Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
MMBT3904LT1G
Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs. This transistor is widely used in low-power signal processing, digital switching, and analog amplification circuits due to its reliable performance and fast switching characteristics. Key Features General-purpose NPN transistor Compact SOT-23 surface-mount package Fast switching speed Low saturation voltage Suitable for low-current and low-power applications High reliability and stability Pb-free, Halogen-free, and RoHS compliant Electrical Characteristics (Typical @ 25°C unless otherwise specified) Collector-Emitter Voltage (VCEO): 40 V Collector-Base Voltage (VCBO): 60 V Emitter-Base Voltage (VEBO): 6 V Collector Current (IC): 200 mA (max) DC Current Gain (hFE): 100 – 300 Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (typ) Transition Frequency (fT): ~300 MHz Absolute Maximum Ratings Collector Current (Continuous): 200 mA Power Dissipation: ~225 mW Junction Temperature: +150°C (max) Operating Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Mechanical Characteristics Package Type: SOT-23 (TO-236AB) Mounting Type: Surface Mount Number of Pins: 3 Marking Code: Dependent on lot/manufacturer marking Applications General-purpose switching circuits Signal amplification Digital logic interfacing LED drivers and small load switching Audio and RF signal processing #CommonPartsLibrary #TransistorBJT #MMBT2222
1.8k Uses0 StarsMMBT2222ALT3G
Bipolar (BJT) Transistor NPN 40V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT2222ALT3G is a NPN general-purpose bipolar junction transistor (BJT) manufactured by onsemi, designed in a SOT-23 surface-mount package. It is the SMD version of the well-known 2N2222A transistor family, used for switching and signal amplification in compact electronic circuits. It is widely used in industrial, automotive (AEC-Q101 qualified variants), and general embedded systems due to its reliability, small size, and good electrical performance. Key Features NPN General-Purpose Transistor Suitable for switching and low-power amplification Collector-Emitter Voltage (Vceo) Up to 40 V Collector Current Up to 600 mA Power Dissipation Around 225–300 mW (depending on package conditions) High Frequency Performance Transition frequency up to ~300 MHz DC Current Gain (hFE) Typically ~100 at moderate currents Low Saturation Voltage Efficient switching performance for digital circuits SOT-23 Surface-Mount Package Compact footprint for modern PCB designs Wide Temperature Range Typically -55°C to +150°C RoHS / Lead-Free Compliant Environmentally compliant manufacturing Typical Applications LED switching circuits Relay driver stages MCU signal interfacing (Arduino, ESP32, etc.) Small motor drivers General signal amplification Automotive and industrial control circuits Important Note MMBT2222ALT3G = SMD version (SOT-23) Equivalent to 2N2222A (TO-92 through-hole version) in function, but not in physical package. 2N2222A SOT-23 #commonpartslibrary #transistor #bjt
580 Uses0 StarsBCM856DS,115
Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important. Key Features Dual PNP transistor configuration in a single package Matched transistor pair for improved circuit stability Low collector-emitter saturation voltage High current gain consistency between channels Compact SOT-363 (SC-88) package for space-constrained designs Suitable for low-power and signal-level applications Electrical Characteristics (typical values unless otherwise noted) Collector-Emitter Voltage (VCEO): -45 V Collector-Base Voltage (VCBO): -50 V Emitter-Base Voltage (VEBO): -5 V Continuous Collector Current (IC): -100 mA per transistor Power Dissipation (Ptot): ~250 mW total DC Current Gain (hFE): 100 to 300 Transition Frequency (fT): ~100 MHz Package Information Package Type: SOT-363 (SC-88) Mounting: Surface Mount Pin Count: 6 Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout) Applications Differential amplifier input stages Current mirror circuits Signal amplification Analog front-end designs Matched pair transistor applications Additional Notes The two transistors are thermally coupled within the same package, improving matching over temperature variations Ideal for precision analog circuits requiring closely matched transistor characteristics Commonly used in compact and high-density PCB layouts #commonpartslibrary #transistor #bjt #pnp
10 Uses0 Stars2SC5171
Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications. Key Features High collector-emitter voltage capability Fast switching performance High current handling capability Low saturation voltage Suitable for high-frequency operation Absolute Maximum Ratings Collector-Emitter Voltage (V<sub>CEO</sub>): 1500 V Collector-Base Voltage (V<sub>CBO</sub>): 1500 V Emitter-Base Voltage (V<sub>EBO</sub>): 9 V Collector Current (I<sub>C</sub>): 3 A Collector Power Dissipation (P<sub>C</sub>): 50 W Junction Temperature (T<sub>J</sub>): 150°C Electrical Characteristics (at T<sub>A</sub> = 25°C unless otherwise specified) DC Current Gain (h<sub>FE</sub>): 8 – 40 Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>): 3 V (max) Base-Emitter Voltage (V<sub>BE</sub>): ~1.5 V (typ) Collector Cutoff Current (I<sub>CBO</sub>): 1 mA (max) Transition Frequency (f<sub>T</sub>): 4 MHz (typ) Package Information Package Type: TO-220 Mounting Type: Through-hole Pin Configuration: Pin 1: Base Pin 2: Collector Pin 3: Emitter Applications Switching power supplies High-voltage switching circuits CRT display circuits Motor control circuits General-purpose high-voltage amplification #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN
1 Uses0 StarsSISS52DN-T1-GE3
N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52
658 Uses0 StarsIMZC120R040M2HXKSA1
CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications • General purpose drives (GPD) • EV Charging • Online UPS/Industrial UPS • Solar power optimizer • String inverter • Energy Storage Systems (ESS) • Welding #CommonPartsLibrary #Transistor #FET #Mosfet #CoolSiC™ G2 IMZC120R040M2H
79 Uses0 Stars
