Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
6N137-560E
The Broadcom® 6N137, HCPL-26xx/06xx/4661, HCNW137/26x1 are optically coupled gates that combine a GaAsP light emitting diode and an integrated high gain photo detector. An enable input allows the detector to be strobed. The output of the detector IC is an open collector Schottky-clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification up to 15,000 V/µs at Vcm = 1000V. This unique design provides maximum AC and DC circuit isolation while achieving TTL compatibility. The optocoupler AC and DC operational parameters are guaranteed from – 40°C to +85°C allowing trouble-free system performance. 15 kV/µs minimum Common Mode Rejection (CMR) at VCM= 1 kV for HCNW2611, HCPL-2611, HCPL-4661, HCPL-0611, HCPL-0661 High speed: 10 MBd typical LSTTL/TTL compatible Low input current capability: 5 mA Guaranteed AC and DC performance over temperature: –40°C to +85°C Available in 8-Pin DIP, SOIC-8, widebody packages Strobable output (single channel products only) Safety approval – UL recognized – 3750 Vrms for 1 minute and 5000 Vrms for 1 minute per UL1577 CSA approved (5000 Vrms/1 Minute rating is for HCNW137/26X1 and Option 020 [6N137, HCPL-2601/11/30/31, HCPL-4661] products only) – IEC/EN/DIN EN 60747-5-5 approved with: VIORM = 567 Vpeak for 06xx Option 060 VIORM = 630 Vpeak for 6N137/26xx Option 060 VIORM =1414 Vpeak for HCNW137/26x1 MIL-PRF-38534 hermetic version available (HCPL56xx/66xx) #CommonPartsLibrary #Isolator #Optocoupler
79 Uses0 StarsSI2300
The SI2300 is a N-channel enhancement-mode MOSFET designed for efficient switching and power management applications. Fabricated using advanced trench MOS technology, it delivers low on-state resistance, fast switching performance, and high current handling capability within a compact surface-mount package. The device is widely used in load switching, battery-powered equipment, DC-DC converters, motor control circuits, power distribution systems, and general-purpose switching applications where efficiency and space optimization are critical. Features N-channel enhancement-mode MOSFET Low on-state resistance for reduced conduction losses Fast switching characteristics Low gate charge for efficient drive operation Compact surface-mount package High current carrying capability Low power dissipation design Optimized for battery-operated systems Suitable for high-speed switching applications RoHS-compliant and lead-free construction Applications Power management circuits Load switching systems Battery protection modules Portable electronic devices DC-DC converter circuits Motor drive applications Power distribution networks Embedded control systems Consumer electronics Industrial automation equipment Electrical Characteristics Low drain-to-source on-resistance High drain current capability Low gate threshold voltage Fast turn-on and turn-off response Low gate capacitance High switching efficiency Low leakage current characteristics Enhanced thermal performance Stable operation across specified temperature ranges Reliable avalanche and transient performance Mechanical Characteristics Surface-mount package construction Compact footprint for high-density PCB layouts Suitable for automated assembly processes Compatible with standard reflow soldering methods Tape-and-reel packaging availability Robust package integrity for production environments Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant package design Suitable for operation in demanding electronic environments Compliant with RoHS and environmental regulations Long operational lifetime under recommended operating conditions #commonpartslibrary #mosfet #nchannelmosfet #powermanagement #powerswitching #semiconductor #transistor #loadswitch #dcdcconverter #batteryprotection #embeddedsystems #industrialelectronics #consumerelectronics #smtcomponent #electronicsdesign
339 Uses0 StarsBSS138-G
MOSFET 50V 0.22A SOT-23-3 These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V ♦ RDS(on) = 3.5 @ VGS = 10 V ♦ RDS(on) = 6.0 @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halogen Free #CommonPartsLibrary #Transistor
156 Uses0 StarsFS8205A
The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics
234 Uses0 StarsIRLZ44ZPBF
N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier
68 Uses0 StarsULN2803ADW
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA Surface Mount 18-SOIC The ULN2803ADW is a high-voltage, high-current Darlington transistor array designed for interfacing low-level digital logic circuits with high-power loads. The device integrates eight NPN Darlington pairs with common-emitter outputs and suppression diodes for inductive load driving. It is commonly used in relay drivers, LED matrix control, solenoid actuation, motor drivers, lamp control, and industrial automation interfaces. The integrated clamp diodes enable direct driving of inductive loads without requiring additional external protection circuitry. The input stage is compatible with standard TTL and CMOS logic levels, making the device suitable for microcontroller, FPGA, and processor-based systems. The ULN2803ADW provides compact multi-channel switching capability in a wide-body SOIC surface-mount package optimized for automated assembly and high-density PCB layouts. Key Features Eight-channel NPN Darlington transistor array High-current sink driver outputs Integrated flyback suppression diodes TTL and CMOS compatible inputs Open-collector outputs Suitable for inductive and resistive loads High output voltage capability Parallel output operation supported for increased current handling Wide operating voltage range Surface-mount SOIC wide-body package Industrial and embedded control application support Electrical Characteristics Darlington transistor output configuration High DC current gain Low input current requirement Common-cathode clamp diode structure Open-collector output topology Logic-level input compatibility High-voltage output tolerance Multi-channel simultaneous switching support Applications Relay and solenoid drivers Stepper motor interfaces LED and lamp driving Industrial automation systems PLC output stages Embedded control systems Printer and actuator control Automotive electronics Logic buffer and level shifting applications Package Information Package Type: SOIC Wide Body Mounting Type: Surface Mount Multi-pin integrated driver package RoHS compliant options available #commonpartslibrary #integratedcircuit #driveric #darlingtonarray #powermanagement #industrialelectronics #embeddedhardware #relaydriver #motorcontrol #automationelectronics
82 Uses0 StarsAO3400
The YFW AO3400 is a 30V N-Channel Enhancement MOSFET designed for low-voltage and high-speed switching applications. It uses advanced trench MOSFET technology to achieve low on-resistance (RDS(on)), fast switching performance, and efficient power handling in a compact SOT-23 package. It is commonly used in load switching, DC-DC converters, battery-powered devices, motor control, LED driving, and PWM switching circuits. Key Features N-Channel Enhancement Mode MOSFET Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.8A Low RDS(on): < 28mΩ @ VGS = 10V < 33mΩ @ VGS = 4.5V < 52mΩ @ VGS = 2.5V Logic-Level Gate Drive Compatible Fast Switching Speed Low Gate Charge Compact SOT-23 Package Suitable for PWM and Load Switch Applications RoHS / Pb-Free Compatible Typical Applications Power switching DC-DC converters Battery management systems Motor and fan control LED drivers Portable electronics Microcontroller-based switching circuits #CommonPartsLibrary #Transistor #FET #Mosfet
1.0k Uses0 StarsMMBT3904LT1G
Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs. This transistor is widely used in low-power signal processing, digital switching, and analog amplification circuits due to its reliable performance and fast switching characteristics. Key Features General-purpose NPN transistor Compact SOT-23 surface-mount package Fast switching speed Low saturation voltage Suitable for low-current and low-power applications High reliability and stability Pb-free, Halogen-free, and RoHS compliant Electrical Characteristics (Typical @ 25°C unless otherwise specified) Collector-Emitter Voltage (VCEO): 40 V Collector-Base Voltage (VCBO): 60 V Emitter-Base Voltage (VEBO): 6 V Collector Current (IC): 200 mA (max) DC Current Gain (hFE): 100 – 300 Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (typ) Transition Frequency (fT): ~300 MHz Absolute Maximum Ratings Collector Current (Continuous): 200 mA Power Dissipation: ~225 mW Junction Temperature: +150°C (max) Operating Temperature Range: -55°C to +150°C Storage Temperature Range: -55°C to +150°C Mechanical Characteristics Package Type: SOT-23 (TO-236AB) Mounting Type: Surface Mount Number of Pins: 3 Marking Code: Dependent on lot/manufacturer marking Applications General-purpose switching circuits Signal amplification Digital logic interfacing LED drivers and small load switching Audio and RF signal processing #CommonPartsLibrary #TransistorBJT #MMBT2222
1.7k Uses0 Stars
