Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
RGPR20NS43HRTL
IGBT 460 V 20 A 107 W Surface Mount LPDS #CommonPartsLibrary #Transistor #IGBT The RGPR20NS43HRTL specification defines the engineering requirements for an ultrafast recovery power rectifier designed for high-efficiency power conversion and switching applications. This specification establishes the functional, electrical, mechanical, thermal, environmental, and quality requirements necessary to ensure reliable rectification performance, low switching losses, and long-term operational stability in power electronic systems. The device is intended for use in switch-mode power supplies, power factor correction circuits, motor drives, industrial power equipment, and other high-frequency power conversion applications. It provides efficient current rectification with fast reverse recovery characteristics, enabling improved system efficiency and reduced electromagnetic interference in demanding electrical environments. Engineering Requirements The rectifier shall be manufactured using qualified semiconductor fabrication processes and high-quality materials to ensure consistent electrical performance, thermal stability, and long service life. The device shall maintain reliable operation under specified voltage, current, and temperature conditions without degradation of functional performance. Electrical characteristics shall provide low forward voltage drop, fast reverse recovery time, and high surge current capability to support efficient high-frequency switching applications. The device shall maintain stable electrical behavior under repetitive switching cycles and transient operating conditions. Thermal performance shall support effective heat dissipation through the package structure and recommended mounting configuration. The component shall operate within specified junction temperature limits while maintaining electrical integrity and long-term reliability under continuous or intermittent load conditions. Mechanical construction shall be suitable for standard surface-mount or through-hole assembly, depending on the package configuration, and shall withstand soldering, handling, vibration, and thermal cycling without mechanical degradation. Workmanship shall be free from defects including contamination, cracks, bond failures, corrosion, or structural inconsistencies that could adversely affect electrical or mechanical performance. Inspection, validation, and testing shall be conducted using calibrated equipment and controlled quality procedures to verify compliance with all applicable engineering and manufacturing requirements. Any deviation from this specification shall require formal engineering evaluation, documented technical justification, and approval through the established engineering change control process. Documentation Supporting documentation shall include engineering drawings, electrical performance data, thermal characterization reports, qualification records, inspection reports, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure complete product traceability. Revision Control Any modification to this specification shall be managed through the formal engineering change management process. All revisions shall undergo technical review, validation, and approval before implementation to ensure continued compliance with design intent and applicable engineering standards. #EngineeringSpecification #PowerRectifier #UltrafastRecoveryDiode #PowerElectronics #SwitchModePowerSupply #IndustrialElectronics #Semiconductor #ThermalManagement #QualityAssurance #EngineeringDocumentation
0 Uses0 StarsDRV8770RGER
Half Bridge (2) Driver DC Motors, General Purpose NMOS, Power MOSFET 24-VQFN (4x4) The DRV8770RGER is a high-voltage brushed DC motor gate driver integrated circuit manufactured by Texas Instruments, designed to drive external N-channel power MOSFETs configured in a dual half-bridge topology for use in brushed DC motor control, stepper motor drive, solenoid actuation, and other inductive load switching applications. Rather than integrating the power stage transistors directly within the IC, the DRV8770 functions as a gate driver, providing the gate voltage and current needed to fully and rapidly switch external discrete power MOSFETs, which allows the designer to choose power devices appropriate to the specific voltage and current requirements of their motor or load without being constrained by the internal power stage of an integrated motor driver. The DRV8770 delivers two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs, while the GVDD rail drives the gates of the low-side MOSFETs. This bootstrap architecture eliminates the need for an external isolated gate drive power supply for the high-side switch, simplifying the overall power stage design significantly compared to approaches that require separate high-side power supply generation. This device decreases system component count, reduces PCB area, and saves cost by integrating two independent half-bridge gate drivers and bootstrap diodes. digikeyTME The high-side and low-side gate drivers can drive source and sink currents sufficient for fast, efficient switching of external power MOSFETs, with total average output current capability defined in the datasheet. The asymmetric source and sink current capability is a deliberate design choice reflecting the typical requirements of power MOSFET switching, where rapid turn-off is often more critical than turn-on speed for preventing shoot-through and managing switching losses in bridge circuits. Small propagation delay and delay matching specifications minimize the dead-time requirement, which further improves efficiency. TMEFarnell The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients on the BSTx and GHx pins. This enhanced transient tolerance is essential in motor drive applications where inductive switching generates voltage spikes and negative voltage excursions on the switch node that would damage less robust gate driver designs. An input deglitcher prevents high-frequency noise on the input pins from affecting the output state of the gate drivers, protecting against inadvertent switching caused by electrical noise on the control interface lines. FarnellAllDataSheet The device can drive one or two DC brush motors, one stepper motor, solenoids, or other inductive loads. This versatility makes it suitable across a broad range of actuator types within the same hardware platform, allowing a single PCB design to serve multiple product variants by simply changing the connected load and the firmware control scheme. Undervoltage protection is provided for both low-side and high-side through GVDD and BST undervoltage lockout, preventing the external power MOSFETs from operating with insufficient gate drive voltage, which would cause them to enter a linear operating region with excessive power dissipation and potential thermal damage. digikeyFarnell The DRV8770RGER is housed in a compact VQFN twenty-four-pin surface-mount package, suited to space-constrained motor drive PCB layouts, and is rated for operation across an extended industrial temperature range. Spec Sheet Identification Part Number: DRV8770RGER Device Family: DRV8770 Manufacturer: Texas Instruments Functional Classification Device Type: Dual half-bridge N-channel MOSFET gate driver IC Topology: Two independent half-bridge gate drivers Application Class: Brushed DC motor, stepper motor, solenoid, and inductive load drive Gate Drive Architecture High-Side Driver: Bootstrap-based gate drive with integrated bootstrap diode Low-Side Driver: GVDD-referenced direct gate drive Gate Drive Current — Source: High source current capability for rapid MOSFET turn-on Gate Drive Current — Sink: Higher sink current capability for rapid MOSFET turn-off Voltage Ratings Maximum Operating Voltage: High-voltage class, suited to industrial motor supply rails Phase Pin Transient Tolerance: Rated for negative voltage transients on SHx switch node pins Bootstrap Pin Transient Tolerance: Elevated absolute maximum on BSTx and GHx pins for spike immunity Timing & Switching Performance Propagation Delay: Small and tightly specified for minimal dead-time requirement Delay Matching: High-side to low-side delay matching for improved bridge efficiency Input Deglitching: Built-in input deglitch filter to suppress high-frequency noise on control inputs Protection Features GVDD Undervoltage Lockout: Protects low-side gate drive from insufficient supply BST Undervoltage Lockout: Protects high-side gate drive from insufficient bootstrap voltage Negative Transient Tolerance: Phase pins rated for switch-node negative voltage excursions Load Compatibility Supported Load Types: Brushed DC motors, stepper motors, solenoids, and general inductive loads Drive Configurations: Single or dual brushed DC motor, single stepper motor, or independent half-bridge loads Environmental & Qualification Operating Temperature Range: Extended industrial temperature range RoHS Compliance: Yes Lifecycle Status: Active production Package Package Type: VQFN — Very thin Quad Flat No-Lead, twenty-four-pin Package Suffix: RGER designation Mounting Method: Surface mount technology (SMT) Package Pitch: Fine pitch, compact footprint Packaging Format Supply Format: Tape-and-reel, cut-tape, and custom reel options available #DRV8770 #DRV8770RGER #TexasInstruments #GateDriver #HalfBridgeDriver #BrushedDCMotor #MotorDriver #StepperMotorDriver #SolenoidDriver #NChannelMOSFET #BootstrapDriver #HighVoltageDriver #PowerElectronics #MotorControl #InductiveLoad #VQFN #SurfaceMount #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #IndustrialMotorDrive
1 Uses0 StarsBC847
All details fully confirmed across multiple authoritative sources including Nexperia, ROHM, Farnell, and others. Here's the complete spec. Engineering Specification — BC847 Device Type: NPN General-Purpose Bipolar Junction Transistor Multiple Manufacturers: Nexperia (formerly Philips/NXP), ROHM, Infineon, Diotec, Vishay, ON Semiconductor, and others General Description The BC847 is an NPN general-purpose silicon bipolar junction transistor, one of the most widely used and long-established small-signal transistors in the surface-mount electronics industry. It is the SMD equivalent of the classic through-hole BC547 transistor family and serves as the industry-standard surface-mount NPN general-purpose transistor for low-power switching and amplification applications across consumer electronics, industrial control, telecommunications, and embedded systems design. The device is a multi-sourced commodity component produced by virtually every major discrete semiconductor manufacturer to a common electrical specification, making it one of the most universally available and cost-effective transistor choices for general-purpose circuit design. The BC847 is built using a silicon planar epitaxial process, a well-established bipolar transistor fabrication technology that produces transistors with tightly controlled electrical parameters, predictable gain characteristics, and consistent performance across production lots and between manufacturers. The epitaxial planar construction produces a transistor with excellent high-frequency performance relative to its voltage and current class, low collector-emitter saturation voltage that minimizes conduction losses in switching applications, and a base-emitter junction suitable for both switching and audio frequency amplification. The device is available in three gain variants — the A, B, and C suffixes — which correspond to progressively higher minimum DC current gain ranges, allowing circuit designers to select the gain bracket most appropriate for their specific application without changing the circuit footprint or pinout. As a general-purpose transistor, the BC847 is suited to an exceptionally broad range of circuit functions. In switching mode, it operates as a saturated switch driven by a base resistor from a logic output or microcontroller GPIO, controlling small loads such as indicator LEDs, signal relays, optocoupler inputs, piezo buzzers, and small solenoids. In linear mode, it functions as a common-emitter or emitter-follower amplifier for audio frequency signal conditioning, sensor signal amplification, bias generation, and reference buffering. Its low noise performance in the audio frequency band, particularly between low audio frequencies and the upper limit of the audible range, also makes it suited to preamplifier stages in audio equipment, microphone input circuits, and other noise-sensitive analog signal chain applications. The device is housed in the SOT-23 three-terminal surface-mount package, the dominant package format for small-signal discrete transistors in modern PCB design. The SOT-23 package offers an extremely compact footprint that allows dense PCB population while remaining fully compatible with standard automated pick-and-place assembly, reflow soldering, and inspection processes. The package is available in standard SOT-23 size as well as smaller variants including SOT-323 and SOT-883 for designs requiring even more compact footprints, with the same electrical specifications across all package options. The complementary PNP device to the BC847 is the BC857, which shares the same package, pinout, and voltage and current ratings in the opposite polarity, allowing straightforward design of complementary push-pull and totem-pole output stages. Spec Sheet Identification Part Number: BC847 (suffixes A, B, C denote gain groups) Device Family: BC847 series, NPN general-purpose transistor Manufacturer: Multi-sourced commodity part — Nexperia, ROHM, Infineon, Diotec, Vishay, ON Semiconductor, and others PNP Complement: BC857 Functional Classification Device Type: NPN bipolar junction transistor (BJT) Construction: Silicon planar epitaxial Application Class: General-purpose switching and amplification Gain Variants BC847A: Lowest gain range group BC847B: Mid gain range group BC847C: Highest gain range group Absolute Maximum Ratings Collector-Emitter Voltage: Standard low-voltage small-signal transistor class Collector-Base Voltage: Slightly higher than collector-emitter rating Emitter-Base Voltage: Standard emitter-base reverse voltage class Collector Current: Low continuous current class, suitable for signal and small load switching Peak Collector Current: Higher pulsed current capability Total Power Dissipation: Low power dissipation class, standard for SOT-23 package Operating Junction Temperature: Extended range, standard silicon transistor class Electrical Characteristics DC Current Gain: Variant-dependent, high gain class for general-purpose applications Collector-Emitter Saturation Voltage: Low saturation voltage for efficient switching Base-Emitter Saturation Voltage: Standard silicon junction voltage class Collector Cutoff Current: Low leakage class Transition Frequency: High-frequency capable for audio and signal switching applications Noise Figure: Low noise in audio frequency band Package & Mechanical Primary Package: SOT-23 (TO-236AB) Alternate Packages: SOT-323 (SC-70), SOT-883 (DFN1006-3) — same electrical specs Mounting Method: Surface mount technology (SMT) Pin Configuration: Base — Pin 1, Emitter — Pin 2, Collector — Pin 3 Target Applications Logic-level switching of LEDs, relays, and small loads Audio frequency signal amplification and preamplification Sensor signal conditioning and buffering Emitter follower and bias circuits Optocoupler and interface drive circuits General-purpose analog and digital circuit design Environmental & Qualification RoHS Compliance: Yes, lead-free across all manufacturer sources Flammability Rating: UL94 V-0 package material Packaging Supply Format: Tape-and-reel, per manufacturer standard packaging #BC847 #BC847B #BC847C #NPNTransistor #BipolarTransistor #BJT #SmallSignalTransistor #GeneralPurposeTransistor #SOT23 #SurfaceMountTransistor #SwitchingTransistor #AmplifierTransistor #LowPowerTransistor #SiliconEpitaxial #BC857Complement #DiscreteComponent #AnalogCircuit #EmbeddedSystems #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #CommodityPart
14 Uses0 StarsMC7805CTG
Linear Voltage Regulator IC Positive Fixed 1 Output 1A TO-220 These voltage regulators are monolithic integrated circuits designed as fixed−voltage regulators for a wide variety of applications including local, on−card regulation. These regulators employ internal current limiting, thermal shutdown, and safe−area compensation. With adequate heatsinking they can deliver output currents in excess of 1.0 A. Although designed primarily as a fixed voltage regulator, these devices can be used with external components to obtain adjustable voltages and currents. Features • Output Current in Excess of 1.0 A • No External Components Required • Internal Thermal Overload Protection • Internal Short Circuit Current Limiting • Output Transistor Safe−Area Compensation • Output Voltage Offered in 1.5%, 2% and 4% Tolerance • Available in Surface Mount D2PAK−3, DPAK−3 and Standard 3−Lead Transistor Packages • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • These are Pb−Free Devices #MC7805CTG #7805 #VoltageRegulator #LinearRegulator #PowerManagement #5VRegulator #Onsemi #TO220 #EmbeddedSystems #ElectronicsDesign #PowerSupply #PCBDesign #HardwareEngineering #IndustrialElectronics #CircuitDesign
17 Uses0 StarsIRLR7843TRPBF
N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor
3 Uses0 StarsIXFH120N15P
N-Channel 200 V 120A (Tc) 714W (Tc) Through Hole TO-247AD (IXFH) # IXFH120N15P ## General Description The IXFH120N15P is a high-current N-channel power MOSFET manufactured by Littelfuse IXYS. It is designed for demanding power switching and power conversion applications requiring low conduction losses, fast switching performance, and high current-handling capability. Built using advanced power MOSFET technology, the device provides excellent efficiency, ruggedness, and thermal performance for industrial power systems, motor drives, battery management equipment, welding systems, uninterruptible power supplies, renewable energy systems, and high-power DC switching applications. Its robust construction and low on-state resistance make it particularly suitable for designs requiring high efficiency and reliable operation under heavy load conditions. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced power semiconductor technology * Low conduction losses * High-current switching capability * Optimized efficiency for power conversion applications * Fast switching performance ### Electrical Characteristics * Low on-state resistance * High-current carrying capability * Low gate drive power requirements * Excellent switching efficiency * Stable electrical performance under demanding operating conditions * Suitable for high-power applications ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation capability * Efficient power control functionality ### Thermal Characteristics * High power dissipation capability * Excellent thermal conductivity * Efficient heat transfer performance * Suitable for heatsink mounting * Reliable operation under continuous load conditions ### Protection and Reliability * Avalanche ruggedness * Robust semiconductor structure * Enhanced reliability under transient conditions * Long operational service life * Industrial-grade durability ### Package Characteristics * Through-hole power package * Electrically isolated mounting configuration * Suitable for high-power assemblies * Automated and manual assembly compatibility * Industrial-grade mechanical construction ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Rugged power device architecture ### Environmental Characteristics * Suitable for industrial operating environments * High mechanical durability * Stable operation across extended temperature ranges * Reliable continuous-duty performance ### Application Areas * Motor Drive Systems * Industrial Power Supplies * Battery Management Systems * Renewable Energy Equipment * Solar Power Converters * DC-DC Converters * High-Power Switching Circuits * Welding Equipment * Uninterruptible Power Supplies * Electric Vehicle Support Systems * Energy Storage Systems * Industrial Automation Equipment ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer Littelfuse IXYS ## Product Family PolarP N-Channel Power MOSFET Series #IXFH120N15P #IXYS #Littelfuse #PowerMOSFET #NChannelMOSFET #PowerElectronics #MotorDrive #DCDCConverter #PowerSupplyDesign #IndustrialElectronics #EnergyStorage #RenewableEnergy #BatteryManagement #ElectronicsEngineering #PowerSemiconductor #Commonpartslibrary #Transistor #MOSFET #FET #tht
0 Uses0 StarsNE555P
555 Type, Timer/Oscillator (Single) IC 100kHz 8-PDIP NE555 DIP-8 through hole The NE555P is a classic and widely used precision timer IC manufactured by companies like Texas Instruments and others. It belongs to the popular 555 timer family and is designed for generating accurate time delays, oscillations, and pulse signals. The “P” variant refers to the PDIP (Plastic Dual In-line Package), making it ideal for through-hole mounting, breadboarding, and prototyping. NE555P PDIP-8 timer Internally, the NE555P consists of: Two comparators A flip-flop A discharge transistor A voltage divider network These blocks allow flexible configuration for timing and waveform generation. Key Features Timing & Operation Modes Monostable mode (one-shot pulse generation) Astable mode (continuous oscillator) Bistable mode (flip-flop operation) Electrical Characteristics Supply voltage range: 4.5V to 16V Output can source or sink up to 200 mA Adjustable duty cycle Performance High timing accuracy and stability Timing range from microseconds to hours (depends on external R and C) Temperature-stable operation Package & Usability 8-pin DIP (through-hole) package Easy to use for: Breadboards DIY electronics Educational projects Common Applications LED flashers and blinkers Pulse generation Time delay circuits PWM control (e.g., dimming LEDs, motor speed control) Tone/sound generation #Timer #commonpartslibrary
2.2k Uses0 StarsIRLML6244TRPBF
MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents
248 Uses0 Stars
