Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
IRFB4110PBF
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Power MOSFET, N-channel enhancement-mode transistor designed for high-current switching applications. Features a 100 V drain-source voltage rating, 180 A continuous drain current, 3.7 mΩ maximum drain-source on-resistance, and TO-220AB package. #PowerMOSFET #NMOSFET #Infineon #IRFB4110PBF #TO220AB #commonpartslibrary #transistor #tht
247 Uses0 StarsBS250P
P-Channel 45V 230mA (Ta) 700mW (Ta) Through Hole TO-92 P-channel enhancement-mode MOSFET transistor used for low-side or high-side load switching and signal control applications, providing voltage-controlled conduction between drain and source. Key specifications (per datasheet): Drain-source voltage (VDS): −45 V Continuous drain current (ID): −0.18 A Gate-source voltage (VGS): ±20 V Package: SOT-23 surface-mount package MOSFET type: P-channel enhancement mode #PChannelMOSFET #EnhancementMode #SOT23 #45V #LowPowerSwitch #DiscreteSemiconductor #CommonPartsLibrary #Transistor #FET #Mosfet #BS250
0 Uses0 StarsEPC2019
GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion
6 Uses0 StarsBSC030N10NS5SCATMA1
N-Channel 100 V 171A (Tc) 188W (Tc) Surface Mount PG-WSON-8-2 The BSC030N10NS5SCATMA1 specification defines the engineering requirements for an N-channel power MOSFET designed for high-efficiency switching and power management applications. This specification establishes the functional, electrical, mechanical, thermal, environmental, and quality requirements necessary to ensure reliable switching performance, low conduction losses, and long-term operational stability in power electronic systems. The device is intended for use in DC-DC converters, synchronous rectification circuits, motor control systems, battery management systems, power distribution modules, and industrial electronic equipment. It provides low on-state resistance, fast switching characteristics, and efficient power handling, making it suitable for high-frequency and high-current applications requiring optimized efficiency and thermal performance. Engineering Requirements The power MOSFET shall be manufactured using advanced semiconductor fabrication processes and qualified materials to ensure consistent electrical characteristics, high switching efficiency, and reliable long-term operation. The device shall maintain stable performance under specified voltage, current, and environmental operating conditions. Electrical characteristics shall provide low on-state resistance, high current-carrying capability, low gate charge, and fast switching performance to minimize conduction and switching losses. The device shall maintain stable operation during repetitive switching cycles, transient load conditions, and dynamic power management applications. Thermal performance shall support efficient heat dissipation through the package structure and printed circuit board interface. The component shall maintain electrical integrity and operational reliability within the specified junction temperature range during continuous and intermittent high-power operation. Mechanical construction shall be suitable for automated surface-mount assembly and compatible with standard solder reflow manufacturing processes. The package shall withstand vibration, thermal cycling, mechanical handling, and environmental exposure without degradation of electrical or mechanical performance. Workmanship shall be free from defects including contamination, cracks, bond failures, package deformation, or structural inconsistencies. Inspection, validation, and testing shall be conducted using calibrated equipment and controlled quality procedures to verify compliance with all applicable engineering and manufacturing requirements. Any deviation from this specification shall require formal engineering evaluation, documented technical justification, and approval through the established engineering change control process. Documentation Supporting documentation shall include engineering drawings, electrical performance specifications, thermal characterization reports, qualification records, inspection reports, material declarations, reliability data, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure complete product traceability. Revision Control Any modification to this specification shall be managed through the formal engineering change management process. All revisions shall undergo technical review, validation, and approval before implementation to ensure continued compliance with design intent and applicable engineering standards. #EngineeringSpecification #PowerMOSFET #NChannelMOSFET #PowerElectronics #PowerManagement #MotorControl #DCDCConverter #Semiconductor #QualityAssurance #EngineeringDocumentation #commonpartslibrary #transistor #mosfet
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